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PE-CVD (Plasma Enhanced Chemical Vapor Deposition) Furnace
PECVD    View:350    date:2016/09/14    Back

PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system, which consists of 500W RF plasma source, 2"  or 3.14" O.D optional split tube furnace, 4 channels precision mass flow meter with gas mixing tank, and high-quality mechanical pump.  
The PE-CVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid state, and benefits:
Lower temperature processing compared to conventional CVD. 
Film stress can be controlled by high/low frequency mixing techniques. 
Control over stoichiometry via process conditions.
Offers a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition.

 

1200oC Max. working temperature for < 60 minutes
1100oC Max for continuous heating
30 segments programmable precision digital temperature controller
440 mm length single heating zone and 150 mm length constant temperate zone
High purity quartz tube optional from ( click optional bar to choose )
2"OD x 1.7"ID x  48" Length 
3.14"OD x 2.83"ID x 48'' Length
One pair of vacuum sealed flange with valves
Input power: 208 - 240V AC input, single phase at max. 4KW
Plasma RF Power Supply 

Output Power

 5 -500W adjustable with ± 1% stability

RF frequency

13.56 MHz ±0.005% stability

Reflection Power

200W max

Matching

Automatic

RF Output Port

50 Ω, N-type, female

Noise

<50 dB

Cooling

Air cooling

Power

208-240VAC, 50/60Hz

Note

This RF power supply can accept 50 - 80 mm Max. quartz tube  by changing flange

Pressure Gauge:
3.8x10-5 to 1125 Torr measurement range
Anti-corrosive, gas-type independent 
High accuracy and reproducibility at atmosphere for reliable atmospheric pressure detection
Fast atmospheric detection eliminates waiting time and shortens process cycle
Easy to exchange plug & play sensor element
4 precision mass flow controller ( MFC)  with digital display and adjusting knob are installed on the left bottom case to control gas flow rate:
 4 Gas channels
o      MFC 1: Control range from 0~100 SCCM
o      MFC 2: Control range from 0~200 SCCM
o      MFC 3: Control range from 0~200 SCCM
o      MFC 4: Control range from 0~500 SCCM

Flowing rate accuracy: ±1% FS
Gas inlet and outlet: 1/4" Swagelok tube connector
One 80mL gas mixing tank is installed in bottom case
Each gas channel has a stainless steel needle valve for easy on/off  
The flow rate is adjustable from the MFC panel